Enhancing the light absorptance of stain-etched black silicon decorated by TiN nanoparticles

Due to the high energy, narrow distribution and breaking through absorption limitation, plasmon-induced hot electrons have been widely applied extend photoresponse spectra of semiconductor. In order further enhance resonance effect local plasmon based on metallic nanostructures, we used hydrofluoric stain etching method fabricate nanostructured black silicon (BSi) deposited titanium nitride (TiN) nanoparticles its surface by reactive magnetron sputtering. The results show that BSi modified plasmonic TiN has higher in wavelength range from 1100 2500 nm compared conventional acid BSi. A PIN photoelectronic detector fabricated proposed shows excellent device performance with responsivity 0.45A/W at 1060 near-infrared band.